Chemical Amplification Resists for Future Lithography

نویسندگان

  • T. UENO
  • H. SHIRAISHI
  • S. UCHINO
  • T. SAKAMIZU
  • T. HATTORI
چکیده

The technologies for future lithography have been proposed, such as i-line phase-shifting lithography, deep-UV lithography and electron beam lithography. We have proposed several types of chemical amplification resist systems for future lithography. These are based on the change in dissolution rate by acid catalyzed reaction for aqueous development: dissolution inhibitor to dissolution promoter for positive resists and the reverse for negative resist. Deprotection reaction of tetrahydropyranyl protected poly(hydroxystyrene) is used for positive resists. Silanol condensation reaction by acid catalyzed reaction was applied to negative resists. Pinacol rearrangement, etherification and intramolecular dehydration of carbinols can also be used for negative resists.

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تاریخ انتشار 2006